Back to results
US 12,759,046 B2Granted
Method of forming an interconnect for an electrochemical device stack using spark plasma sintering
AssigneeBloom Energy Corporation
InventorsAdam Byrd, Adil Ashary
Life of this patent
Estimating the term…
Abstract
A method of forming an interconnect for an electrochemical device stack includes loading a die with an interconnect material comprising an interconnect body powder comprising chromium and iron, and spark plasma sintering (SPS) the interconnect material to form a body of the interconnect.
Claims20
A method of forming an interconnect for an electrochemical device cell stack, comprising:
- loading a die containing a lower punch comprising upper ribs with an interconnect material comprising a first layer of interconnect body powder comprising chromium and iron over the upper ribs of the lower punch;
- inserting an intermediate punch comprising upper ribs and lower ribs into the die such that the lower ribs of the intermediate punch face the first layer of interconnect body powder;
- loading the die with additional interconnect material comprising a second layer of interconnect body powder comprising chromium and iron over the upper ribs of the intermediate punch;
- inserting an upper punch comprising lower ribs into the die such that the lower ribs of the upper punch face the second layer of interconnect body powder;
- and
- spark plasma sintering (SPS) the interconnect material to form interconnects having air channels and fuel channels disposed on opposing air and fuel sides of each of the interconnects.
3 more elements
A method of forming an interconnect for an electrochemical cell stack, comprising:
- loading a die with an interconnect material comprising a composite interconnect body powder comprising chromium and iron, and a protective powder disposed above or below the interconnect body powder, wherein the protective powder comprises a metal oxide spinel material, a perovskite material, or a combination thereof;
- spark plasma sintering (SPS) the composite interconnect material to form an interconnect comprising a body of the interconnect and a protective layer disposed on an air side of the body of the interconnect, wherein the protective layer comprises the metal oxide spinel material, the perovskite material, or the combination thereof;
- removing the interconnect from the die;
- placing the interconnect on a first electrochemical cell located in the electrochemical cell stack, the first electrochemical cell comprising a first electrolyte, a first anode electrode located on a first side of the first electrolyte, and a first cathode electrode located on a second side of the first electrolyte;
- and
- after placing the interconnect, placing a second electrochemical cell on the interconnect in the electrochemical cell stack, the second electrochemical cell comprising a second electrolyte, a second anode electrode located on a first side of the second electrolyte, and a second cathode electrode located on a second side of the second electrolyte.
3 more elements
Dependencies are inferred from the claim text.