Rapid thermal processing for direct bonding
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsDominik Suwito, Thomas Workman, Rajesh Katkar, Laura Wills Mirkarimi
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Abstract
Bonded structures and methods of direct hybrid bonding are disclosed. Non-conductive regions of two elements, such as dies or wafers, are first bonded together to form a bonded structure. Aligned conductive regions of the bonded structure, such as metal pads or traces, are then annealed to expand and bridge a gap between them. The anneal includes rapid thermal processing (RTP), such as with radiant heating. The bond interface between the first and second conductive features includes rapid growth structure(s) indicative of the inclusion of RTP in the anneal. Additional non-RTP anneal phases can also be employed.
Claims20
A method of forming a bonded structure, the method comprising:
- providing a first element including a first non-conductive field region and a first conductive feature;
- directly bonding the first element to a second element, the second element including a second non-conductive field region and a second conductive feature, such that the first non-conductive field region is directly bonded to the second non-conductive field region without an intervening adhesive, and the first conductive feature is aligned with the second conductive feature;
- and
- after directly bonding the first element to the second element, annealing the first and second elements by way of rapid thermal process, the rapid thermal process comprising heating the bonded first and second elements by way of a radiant energy source.
A method of direct bonding, the method comprising:
- directly bonding non-conductive regions of a first element to non-conductive regions of a second element to form a bonded structure;
- and
- after directly bonding the non-conductive regions, annealing the bonded structure to bridge a gap between aligned conductive features of the first element and the second element in the bonded structure, wherein annealing comprises exposing the bonded structure to radiant heating.
A bonded structure, comprising:
- a first element including a first non-conductive field region and a first conductive feature;
- and
- a second element including a second non-conductive field region and a second conductive feature, the second element directly bonded to the first element along a bond interface such that the first non-conductive field region is directly bonded to the second non-conductive field region without an intervening adhesive, and the first conductive feature is directly bonded to the second conductive feature without an intervening adhesive,
- wherein the bond interface between the first and second conductive features comprises a rapid growth structure indicative of annealing by a rapid thermal process by way of a radiant energy source.
Dependencies are inferred from the claim text.