Semiconductor device and corresponding method

A semiconductor device, comprising:

• a semiconductor die mounted at a die area of a package with an array of electrically conductive balls providing electrical contacts for the semiconductor die;
• at least one power channel to convey power supply current to the die area, the at least one power channel extending between a distal end at a periphery of the package and a proximal end at a periphery of the die area of the package, wherein the at least one power channel comprises a stack of electrically conductive planes including a current inflow plane opposite the die area of the package and a current outflow plane towards the die area of the package;
• and
• a distribution of electrically conductive balls in the array of electrically conductive balls, the distribution comprising electrically conductive balls coupled to the current inflow plane of the at least one power channel, wherein the at least one power channel provides current conduction paths towards the die area of the package for electrically conductive balls in the distribution of electrically conductive balls coupled to the current inflow plane of the at least one power channel;
• wherein:
• adjacent electrically conductive planes in the stack of electrically conductive planes of the at least one power channel are electrically coupled with electrically conductive vias extending therebetween;
• and
• the electrically conductive planes in the at least one power channel are stacked in a stepped arrangement wherein the number of stacked planes in each step of the stepped arrangement increases from step to step in a direction from the distal end to the proximal end of the power channel, wherein said current conduction paths towards the die area of the package have resistance values that decrease from the distal end to the proximal end of the at least one power channel;
• and
• each electrically conductive plane in the stack of the at least one power channel has a length in the direction from the distal end to the proximal end of the power channel, wherein the length of each electrically conductive plane in the stack decreases from the current inflow plane towards the current outflow plane of the at least one power channel.