Semiconductor device with slanted conductive layers and method for fabricating the same
AssigneeNanya Technology Corporation
InventorKuo-Hui Su
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Abstract
The present application discloses a semiconductor device including a first die and a second die. The first die includes a first dielectric layer disposed over a first substrate, a second dielectric layer disposed over the first dielectric layer, a first metal layer disposed in the first dielectric layer, and a first conductive via disposed in the second dielectric layer. The first conductive via includes conductive layers and a top conductive layer electrically coupled to the conductive layers. Each of the plurality of conductive layers are extended along a direction. The direction and a top surface of the first die form an acute angle greater than 0 degrees. The second die is bonded to the first die by bonding the second conductive via to the first conductive via.
Claims11
A semiconductor device, comprising:
- a bottom portion, comprising a first stack structure, a first impurity region adjacent to the first stack structure, and a conductive plug;
- and
- an upper portion, disposed over the bottom portion, comprising a second stack structure on top of the first stack structure and a second impurity region which is positioned adjacent to the second stack structure and on top of the first impurity region,
- wherein the first stack structure comprises a plurality of gate assemblies coupled to the first impurity region, and the second stack structure comprises a plurality of capacitor sub-units coupled to the second impurity region,
- wherein the conductive plug is upwardly extended from the first impurity region to the second impurity region, wherein the first impurity region is electrically coupled to the second impurity region through the conductive plug,
- wherein the conductive plug comprises:
- a plurality of conductive layer;
- a dielectric layer surrounding the plurality of conductive layers;
- and
- a top conductive layer, electrically coupled to the plurality of conductive layers,
- wherein the second stack structure is not in direct contact with the top conductive layer;
- wherein each of the plurality of conductive layers are extended along a direction, wherein the direction and a top surface of the first impurity region form an acute angle.
Dependencies are inferred from the claim text.