Semiconductor package with stacked dies and thermal substrate encapsulation

A semiconductor device, comprising:

• a first semiconductor die comprising a first bonding structure;
• a second semiconductor die disposed on the first bonding structure of the first semiconductor die, the second semiconductor die comprising a second bonding structure, and the second semiconductor die being electrically connected to the first semiconductor die through the first bonding structure and the second bonding structure;
• thermal silicon substrates disposed on the first bonding structure of the first semiconductor die, wherein the thermal silicon substrates are spaced apart from the second semiconductor die, and the thermal silicon substrates are spaced apart from each other;
• an encapsulation disposed on the first semiconductor die, the encapsulation encapsulating the second semiconductor die and the thermal silicon substrates, wherein the encapsulation comprises portions, the portions extend between the thermal silicon substrates, and the encapsulation comprises:
• a metal layer disposed on the first bonding structure;
• and
• an insulating capping layer covering the second semiconductor die and the thermal silicon substrates, wherein sidewalls of the second semiconductor die and sidewalls of the thermal silicon substrates are spaced apart from the metal layer by the insulating capping layer.

A semiconductor device, comprising:

• a first semiconductor die;
• a second semiconductor die disposed on the first semiconductor die, the second semiconductor die being electrically connected to the first semiconductor die through a first bonding interface;
• a thermal silicon substrate disposed on the first semiconductor die, wherein the thermal silicon substrate is spaced apart from the second semiconductor die by the first bonding interface;
• an encapsulation disposed on the first semiconductor die, the encapsulation encapsulating the second semiconductor die and the thermal silicon substrate, wherein the encapsulation comprising:
• a filling material layer disposed on the first semiconductor die and located between the second semiconductor die and thermal silicon substrate, wherein from a top view of the semiconductor device, the filling material layer surrounds the second semiconductor die and the thermal silicon substrate, the filling material layer comprises portions, and the portions extends between the thermal silicon substrates;
• an insulator, wherein the filling material layer is spaced apart from the second semiconductor die and the thermal silicon substrate by the insulator;
• and
• a second bonding interface covering the second semiconductor die and the encapsulation.