Asymmetrical dielectric-to-metal adhesion architecture for electronic packages

An electronic device package structure, comprising;

• a substrate with a first side and a second side opposite the first side;
• a first conductive feature on and entirely over the first side, the first conductive feature having a first surface and a first sidewall, the first surface substantially parallel to the first side;
• a conformal first dielectric material layer in contact with a first portion of the first surface and the first sidewall, wherein the conformal first dielectric material layer has a first composition comprising silicon and nitrogen;
• a first via in contact with a second portion of the first surface;
• a second dielectric material in contact with the conformal first dielectric material layer and the first via, wherein the second dielectric material has a second composition comprising a first organic material;
• a second conductive feature on and entirely over the second side, the second conductive feature having a second surface and a second sidewall, the second surface substantially parallel to the second side;
• a third dielectric material in contact with a first portion of the second surface and the second sidewall, wherein the third dielectric material has the second composition or a third composition comprising a second organic material;
• and
• a second via in contact with a second portion of the second surface and the third dielectric material, wherein a surface roughness of the first portion of the second surface is greater than a surface roughness of the first portion of the first surface and greater than a surface roughness of the second portion of the second surface.