Memory device package having scribe line and method for manufacturing the same

A memory device package, comprising:

• a substrate having a first chip region, a second chip region, and a first scribe line region connected between the first chip region and the second chip region;
• a carrier comprising a first carrier conductive pad and a second carrier conductive pad, wherein the substrate is disposed on the carrier;
• a first memory chip disposed over the first chip region at a position that the first chip region is positioned between the first memory chip and the carrier, wherein the first memory chip comprises a first conductive pad;
• a second memory chip disposed over the second chip region at a position that the second chip region is positioned between the second memory chip and the carrier, wherein the second memory chip comprises a second conductive pad;
• a first conductive wire disposed outside of the substrate, wherein the first memory chip and the second memory chip are electrically connected through the first conductive wire, wherein the first conductive wire is electrically connected between the first conductive pad and the second conductive pad;
• a second conductive wire disposed outside of the substrate, wherein the second conductive wire is electrically connected between the first conductive pad and the first carrier conductive pad to electrically connect the first memory chip to the carrier;
• a third conductive wire disposed outside of the substrate, wherein the third conductive wire is electrically connected between the second conductive pad and the second carrier conductive pad to electrically connect the second memory chip to the carrier;
• and
• a circuit layer disposed in the substrate, wherein the first memory chip and the second memory chip are electrically connected through the circuit layer.