Bonding layers formed of high thermal conductivity materials

A method for forming a structure with a backside power delivery network, comprising:

• forming a first layer stack that includes, at least, a front side metallization (FSM) signal layer formed on a silicon die layer containing nano-through silicon vias (n-TSVs) that is formed on a back side metallization (BSM) power distribution layer, wherein the n-TSVs provide back side power connections to the FSM signal layer and have a diameter of approximately 100 nm;
• forming a second layer stack that includes, at least, a silicon carrier layer;
• and
• forming a third layer stack that includes the first layer stack and the second layer stack bonded together with a bonding layer interposed between the first layer stack and the second layer stack, wherein the bonding layer is formed of a cubic-boron nitride-based material and has a thickness of approximately 250 nm to approximately 1.2 microns.

A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for forming a structure with a backside power delivery network to be performed, the method comprising:

• forming a first layer stack that includes, at least, a front side metallization (FSM) signal layer formed on a silicon die layer containing nano-through silicon vias (n-TSVs) that is formed on a back side metallization (BSM) power distribution layer, wherein the n-TSVs provide back side power connections to the FSM signal layer;
• forming a second layer stack that includes, at least, a silicon carrier layer;
• and
• forming a third layer stack that includes the first layer stack and the second layer stack bonded together with a bonding layer interposed between the first layer stack and the second layer stack, wherein the bonding layer is formed of a cubic-boron nitride-based material.