Integrated hybrid heat dissipation system that maximizes heat transfer from heterogeneous integration

A semiconductor package, comprising:

• a silicon die mounted on a substrate by flip-chip solder balls;
• an integrated heat spreader including a thin flexible foil and an integrated heat spreader supporter, wherein the thin flexible foil has a hollowed out central area and a curve-shaped thermal-induced stress absorbing mechanism, and the thin flexible foil is bonded with the silicon die with a high temperature durable bonding material, and a portion of the silicon die is exposed out through the hollowed out central area;
• and
• a heat sink including a microjet impingement mechanism, wherein the microjet impingement mechanism has an inlet chamber, a plurality of inlet vents, a plurality of jet nozzles, an outlet queue chamber, and a plurality of restored nozzles outlet vents;
• wherein liquid is filled into the inlet chamber through the inlet vents and direct-jetted on the silicon die through the jet nozzles, and then liquid flows into the outlet queue chamber through the restored nozzles and exits through the outlet vents.

A semiconductor package, comprising:

• at least a first die and a second die mounted on a substrate by flip-chip solder balls, wherein a first thickness of the first die is different from a second thickness of the second die;
• an integrated heat spreader including a thin flexible foil and an integrated heat spreader supporter, wherein the thin flexible foil has at least two hollowed out central areas and a curve-shaped thermal-induced stress absorbing mechanism, and the thin flexible foil is bonded with the first die and the second die with a high temperature durable bonding material, and a portion of each first and second die is exposed out through the hollowed out central areas;
• a heat sink fixed with vents, wherein a cavity-like container portion is defined among the backside of the heat sink, the integrated heat spreader, and the exposed portion of the first and second dies;
• and
• a thermal interface material applied within the cavity-like container portion, wherein heat generated from the first and second dies is conducted through the thermal interface material to the heat sink directly, and the vents in the heat sink accommodates expansion or shrinkage of the thermal interface material during thermal cycling;
• wherein the high temperature durable bonding material applied between the integrated heat spreader and the first and second dies, and the heat sink comprises protruded parts with different thicknesses corresponding to the first thickness of the first die and the second thickness of the second die.

A semiconductor package, comprising:

• at least a first die and a second die mounted on a substrate by flip-chip solder balls, wherein a first thickness of the first die is different from a second thickness of the second die;
• an integrated heat spreader including a thin flexible foil and an integrated heat spreader supporter, wherein the thin flexible foil has at least two hollowed out central areas and a curve-shaped thermal-induced stress absorbing mechanism, and the thin flexible foil is bonded with the first die and the second die with a high temperature durable bonding material, and a portion of each first and second die is exposed out through the hollowed out central areas of the integrated heat spreader;
• and
• a heat sink including a microjet impingement mechanism, wherein the microjet impingement mechanism has an inlet chamber, a plurality of inlet vents, a plurality of jet nozzles, an outlet queue chamber, and a plurality of restored nozzles outlet vents;
• wherein liquid is filled into the inlet chamber through the inlet vents and direct-jetted on each of first and second dies through the jet nozzles, and liquid then flows into the outlet queue chamber through the restored nozzles and exits through the outlet vents.