Single backside power plane for improved power delivery

A microelectronic structure comprising:

• a plurality of electronic devices,
• a plurality of frontside contacts, wherein each of the plurality of frontside contacts is connected to a frontside of one of the plurality electronic devices, respectively, wherein each of the plurality of frontside contacts is a same first electric potential, wherein each frontside contacts of the plurality of frontside contacts is located on a first horizontal side of the one of the plurality of electronic devices;
• a plurality of backside contacts, wherein each of the plurality of backside contacts is connected to a backside of one of the plurality of electronic devices, respectively, wherein each of the plurality of backside contacts is a same second electrical potential, wherein the first electrical potential is different than the second electrical potential, wherein each backside contact of the plurality of backside contacts is located on a second horizontal side of the one of the plurality of electronic devices, wherein the first horizontal side and the second horizontal side are located on opposite sides of the plurality of electronic devices;
• and
• a backside power plane connected to each of the plurality of backside contacts, wherein the backside power plane and the plurality of backside contacts are formed of a single continuous metal layer comprised of a same metal material, wherein the backside power plane is comprised of a single metal layer.