Light-emitting device and method of manufacturing the same, display panel and display apparatus
AssigneesBeijing BOE Technology Development Co., Ltd., Boe Technology Group Co., Ltd.
InventorHaowei Wang
Life of this patent
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Abstract
A light-emitting device is provided. The light-emitting device includes a first electrode, a second electrode, a quantum dot light-emitting layer located between the first electrode and the second electrode, and a hole transporting doped layer. The hole transporting doped layer is located between the quantum dot light-emitting layer and the second electrode. The hole transporting doped layer includes a mixture of at least two hole transporting materials, and highest occupied molecular orbital energy levels of the at least two hole transporting materials are different.
Claims18
A light-emitting device, comprising:
- a first electrode and a second electrode;
- a quantum dot light-emitting layer located between the first electrode and the second electrode;
- and
- a hole transporting doped layer located between the quantum dot light-emitting layer and the second electrode;
- wherein the hole transporting doped layer includes a mixture of at least two hole transporting materials, and highest occupied molecular orbital energy levels of the at least two hole transporting materials are different;
- wherein
- mobilities of the at least two hole transporting materials are different;
- of any two hole transporting materials, a mobility of a hole transporting material of which a highest occupied molecular orbital energy level is low is less than a mobility of a hole transporting material of which a highest occupied molecular orbital energy level is high;
- the at least two hole transporting materials include a first hole transporting material and a second hole transporting material, and a highest occupied molecular orbital energy level of the first hole transporting material is less than a highest occupied molecular orbital energy level of the second hole transporting material;
- and
- the hole transporting doped layer includes a plurality of doped sub-layers that are arranged in a stack;
- of any two adjacent doped sub-layers, a mass ratio of the first hole transporting material to the second hole transporting material in a doped sub-layer proximate to the quantum dot light-emitting layer is greater than a mass ratio of the first hole transporting material to the second hole transporting material in a doped sub-layer away from the quantum dot light-emitting layer.
A method of manufacturing a light-emitting device, comprising:
- forming a quantum dot light-emitting layer on a side of a first electrode;
- forming a hole transporting doped layer on a side of the quantum dot light-emitting layer away from the first electrode;
- wherein the hole transporting doped layer includes a mixture of at least two hole transporting materials, and highest occupied molecular orbital energy levels of the at least two hole transporting materials are different;
- and
- forming a second electrode on a side of the hole transporting doped layer away from the quantum dot light-emitting layer;
- wherein
- the at least two hole transporting materials include a first hole transporting material and a second hole transporting material, and a highest occupied molecular orbital energy level of the first hole transporting material is less than a highest occupied molecular orbital energy level of the second hole transporting material;
- and
- the hole transporting doped layer includes a plurality of doped sub-layers that are arranged in a stack;
- of any two adjacent doped sub-layers, a mass ratio of the first hole transporting material to the second hole transporting material in a doped sub-layer proximate to the quantum dot light-emitting layer is greater than a mass ratio of the first hole transporting material to the second hole transporting material in a doped sub-layer away from the quantum dot light-emitting layer.
Dependencies are inferred from the claim text.