Light emitting diode and light emitting device having electrode extension strips and ohmic contact layer

A light emitting diode, comprising:

• a semiconductor epitaxial stacked layer at least comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer stacked in sequence, wherein the semiconductor epitaxial stacked layer is formed with a first mesa, and the first mesa exposes the first conductive type semiconductor layer;
• a first contact electrode located on the first mesa and electrically connected to the first conductive type semiconductor layer;
• a second contact electrode located on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer;
• a first wiring electrode and a second wiring electrode located on the first contact electrode and the second contact electrode,
• wherein horizontal projections of the first wiring electrode and the second wiring electrode on the semiconductor epitaxial stacked layer fall within horizontal projections of the first contact electrode and the second contact electrode on the semiconductor epitaxial stacked layer;
• a first electrode extension strip and a second electrode extension strip located on the semiconductor epitaxial stacked layer, wherein the first electrode extension strip and the second electrode extension strip are connected to the first contact electrode and the second contact electrode;
• and
• an ohmic contact layer in direct contact with the second conductive type semiconductor layer, wherein the ohmic contact layer is completely covered by the second electrode extension strip and has a patterned structure corresponding to the second electrode extension strip.