Light emitting device
AssigneeJapan Display Inc.
InventorsHayata Aoki, Masumi Nishimura, Hiroumi Kinjo
Life of this patent
Estimating the term…
Abstract
A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction. Each of the plurality of pixels includes an amorphous substrate, a semi-transparent reflective layer over the amorphous substrate, a first insulating alignment layer over the semi-transparent reflective layer, a first semiconductor layer over the first insulating alignment layer, a light emitting layer over the first semiconductor layer, a second semiconductor layer over the light emitting layer, and an electrode layer over the second semiconductor layer. Each of the first semiconductor layer, the light emitting layer, and the second semiconductor layer includes gallium nitride.
Claims20
A light emitting device comprising:
- a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction,
- wherein each of the plurality of pixels comprises:
- an amorphous substrate,
- a semi-transparent reflective layer over the amorphous substrate,
- a first insulating alignment layer over the semi-transparent reflective layer,
- a first semiconductor layer over the first insulating alignment layer,
- a light emitting layer over the first semiconductor layer,
- a second semiconductor layer over the light emitting layer, and
- an electrode layer over the second semiconductor layer, and
- each of the first semiconductor layer, the light emitting layer, and the second semiconductor layer comprises gallium nitride.
A light emitting device comprising:
- a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction,
- wherein each of the plurality of pixels comprises:
- an amorphous substrate,
- a first insulating alignment layer over the amorphous substrate,
- a semi-transparent reflective layer over the first insulating alignment layer,
- a first semiconductor layer over the semi-transparent reflective layer,
- a light emitting layer over the first semiconductor layer,
- a second semiconductor layer over the light emitting layer, and
- an electrode layer over the second semiconductor layer, and
- each of the first semiconductor layer, the light emitting layer, and the second semiconductor layer comprises gallium nitride.
A light emitting device comprising:
- a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction,
- wherein each of the plurality of pixels comprises:
- an amorphous substrate,
- a first insulating alignment layer over the amorphous substrate,
- an electrode layer over the first insulating alignment layer,
- a first semiconductor layer over the electrode layer,
- a light emitting layer over the first semiconductor layer,
- a second semiconductor layer over the light emitting layer, and
- a semi-transparent layer over the second semiconductor layer, and
- each of the first semiconductor layer, the light emitting layer, and the second semiconductor layer comprises gallium nitride.
Dependencies are inferred from the claim text.