Solar cell and preparation method therefor and application thereof
AssigneeTongwei Solar (Chengdu) Co., Ltd.
InventorsXiajie Meng, Guoqiang Xing
Life of this patent
Estimating the term…
Abstract
A preparation method for a solar cell includes: providing a silicon wafer substrate having a first surface and a second surface, which is opposite to the first surface; forming a silicon-containing thin film comprising a doped layer on the first surface of the silicon wafer substrate, wherein the forming method for the doped layer comprises: forming a partially doped layer in an atmosphere in which the flow rate of a dopant gas source is 100-1000 sccm and the flow rate of silane is 1000-4000 sccm, and forming a remaining doped layer in an atmosphere in which the flow rate of the dopant gas source is 1500-3000 sccm and the flow rate of the silane remains unchanged; forming a patterned region; and performing a texturing treatment.
Claims20
A preparation method for a solar cell, comprising the following steps:
- S10, providing a silicon wafer substrate, wherein the silicon wafer substrate has a first surface and a second surface opposite to the first surface;
- S20, forming a silicon-containing film on the first surface of the silicon wafer substrate, the silicon-containing film comprising a silicon oxide layer, a doping layer having a thickness of 30 nm to 300 nm, and a mask layer that are sequentially formed on the first surface of the silicon wafer substrate, wherein a method for forming the doping layer comprises:
- forming a doping layer having an initial thickness of 10 nm to 30 nm in an atmosphere in which a flow rate of a doping gas source is 100 sccm to 1000 sccm and a flow rate of silane is 1000 sccm to 4000 sccm, and forming a remaining thickness of the doping layer in an atmosphere in which a flow rate of the doping gas source is 1500 sccm to 3000 sccm and a flow rate of the silane is 1000 sccm to 4000 sccm;
- S30, patterning the silicon-containing film on the first surface to form a patterned region;
- and
- S40, performing texturing treatment to the silicon wafer substrate having the silicon-containing film and the patterned region.
A solar cell prepared by a preparation method comprising the following steps:
- S10, providing a silicon wafer substrate, wherein the silicon wafer substrate has a first surface and a second surface opposite to the first surface;
- S20, forming a silicon-containing film on the first surface of the silicon wafer substrate, the silicon-containing film comprising a silicon oxide layer, a doping layer having a thickness of 30 nm to 300 nm, and a mask layer that are sequentially formed on the first surface of the silicon wafer substrate, wherein a method for forming the doping layer comprises:
- forming a doping layer having an initial thickness of 10 nm to 30 nm in an atmosphere in which a flow rate of a doping gas source is 100 sccm to 1000 sccm and a flow rate of silane is 1000 sccm to 4000 sccm, and forming a remaining thickness of the doping layer in an atmosphere in which a flow rate of the doping gas source is 1500 sccm to 3000 sccm and a flow rate of the silane is 1000 sccm to 4000 sccm;
- S30, patterning the silicon-containing film on the first surface to form a patterned region;
- and
- S40, performing texturing treatment to the silicon wafer substrate having the silicon-containing film and the patterned region.
Dependencies are inferred from the claim text.