Structures including a photodetector and multiple deep trenches
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsWanbing Yi, Yong Chau Ng, Xiaodong Li, Weichu Qiu
Life of this patent
Estimating the term…
Abstract
Structures including a photodetector, such as a single-photon avalanche diode, and related methods. The structure comprises a semiconductor layer, a photodetector including a well in the semiconductor layer, and a deep trench isolation region including a first conductor layer extending through the semiconductor layer. The deep trench isolation region surrounds the photodetector. The structure further comprises a bond pad, and an electrical connection including a second conductor layer extending from the bond pad through the semiconductor layer.
Claims20
A structure comprising:
- a semiconductor layer;
- a back-end-of-line stack on the semiconductor layer, the back-end-of-line stack including a plurality of interlayer dielectric layers and a first metal feature in the plurality of interlayer dielectric layers;
- a photodetector including a well in the semiconductor layer;
- a deep trench isolation region including a first conductor layer extending through the semiconductor layer, the deep trench isolation region surrounding the photodetector, the first conductor layer having a first bottom surface, and the first bottom surface of the first conductor layer coextensive with the first metal feature;
- a bond pad;
- and
- an electrical connection including a second conductor layer extending from the bond pad through the semiconductor layer, the second conductor layer having a second bottom surface, and the second bottom surface coplanar with the first bottom surface,
- wherein the first metal feature is electrically floating.
A method comprising:
- forming a back-end-of-line stack on a semiconductor layer, wherein the back-end-of-line stack includes a plurality of interlayer dielectric layers and a metal feature in the plurality of interlayer dielectric layers;
- forming a photodetector including a well in the semiconductor layer;
- forming a deep trench isolation region including a first conductor layer extending through the semiconductor layer, wherein the deep trench isolation region surrounds the photodetector, the first conductor layer has a first bottom surface, and the first bottom surface of the first conductor layer is coextensive with the metal feature;
- and
- forming an electrical connection including a second conductor layer extending from a bond pad through the semiconductor layer, wherein the second conductor layer has a second bottom surface, the second bottom surface is coplanar with the first bottom surface, and the metal feature is electrically floating.
Dependencies are inferred from the claim text.