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US 12,757,510 B2Granted
Image sensor with optical structure for flare reduction
AssigneeOmniVision Technologies, Inc.
InventorsBill Phan, Duli Mao, Seong Yeol Mun
Life of this patent
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Abstract
An image sensor is described. The image sensor comprises a plurality of pixels arranged to form an active pixel array, a plurality of contact pads disposed within a peripheral region of the image sensor that surrounds the active pixel array, and an optical structure disposed within the peripheral region between the plurality of contact pads and the active pixel array. The optical structure is adapted to mitigate stray light from reaching the active pixel array.
Claims19
An image sensor, comprising:
- a plurality of pixels arranged to form an active pixel array, wherein the plurality of pixels includes a plurality of photodiodes formed within a semiconductor substrate and configured to generate image charge in response to incident light;
- a plurality of contact pads disposed within a peripheral region of the image sensor, the peripheral region surrounding the active pixel array;
- an optical structure disposed on the semiconductor substrate within the peripheral region between the plurality of contact pads and the active pixel array, wherein the optical structure is adapted to mitigate stray light from reaching the active pixel array;
- and
- a metal shield disposed within the peripheral region proximate to a first side of the semiconductor substrate, wherein the metal shield is disposed between the first side of the semiconductor substrate and the optical structure.
2 more elements
An image sensor, comprising:
- a plurality of pixels arranged to form an active pixel array, wherein the plurality of pixels includes a plurality of photodiodes formed within a semiconductor substrate;
- an optical structure disposed within a peripheral region of the image sensor, the peripheral region surrounding the active pixel array;
- and
- a metal shield disposed within the peripheral region proximate to a first side of the semiconductor substrate, wherein the metal shield is disposed between the first side of the semiconductor substrate and the optical structure,
- wherein the optical structure is segmented to form a plurality of regions of a first material separated by a low-refractive-index material, and wherein the plurality of regions of the first material have a first refractive index greater than a corresponding refractive index of the low-refractive-index material but less than a metal refractive index of a first metal included in the metal shield.
2 more elements
Dependencies are inferred from the claim text.