Sensing device, and method of manufacturing the same

A sensing device, comprising:

• a substrate;
• a circuit layer disposed on the substrate;
• a photosensitive element disposed on the substrate and electrically connected to the circuit layer;
• a light-shielding layer disposed on the photosensitive element and having an opening overlapping the photosensitive element;
• a conductive layer disposed on the light-shielding layer, wherein the conductive layer passes through the opening and is electrically connected to the photosensitive element;
• and
• an insulating layer disposed on the circuit layer, wherein the photosensitive element comprises a first-type semiconductor layer, a second-type semiconductor layer and an intrinsic semiconductor layer disposed between the first-type semiconductor layer and the second-type semiconductor layer, and a portion of the insulating layer is disposed between the first-type semiconductor layer and the intrinsic semiconductor layer,
• wherein the insulating layer has a plurality of openings, and the intrinsic semiconductor layer is in contact with the first-type semiconductor layer through the plurality of openings.