Image sensing pixel configurations for reduced dark current noise

An image sensor configured to capture imagery with mitigated noise, the image sensor comprising:

• a plurality of image sensing pixels arranged to form a sensor array, wherein:
• each image sensing pixel of the plurality of image sensing pixels comprises a semiconductor photodetector connected to a photosensitive region that comprises a photon reception area configured to receive photons to facilitate image capture,
• each photon reception area comprises a length and a width,
• for at least a particular image sensing pixel of the plurality of image sensing pixels, the length or the width of the photon reception area is smaller than about 80% of a pixel pitch measurement between the particular image sensing pixel and an adjacent image sensing pixel of the plurality of image sensing pixels, wherein the length or the width of the photon reception area contributes to reduced volume of the photosensitive region to mitigate sensor noise for the image sensor, and
• a space between the photosensitive region of the particular image sensing pixel and the photosensitive region of the adjacent image sensing pixel comprises an intermediate silicon region and does not include a semiconductor photodetector.

An image sensor configured to capture imagery with mitigated noise, the image sensor comprising:

• a plurality of image sensing pixels arranged to form a sensor array, wherein:
• each image sensing pixel of the plurality of image sensing pixels comprises a semiconductor photodetector connected to a photosensitive region that comprises a photon reception area configured to receive photons to facilitate image capture,
• each photon reception area comprises a length and a width,
• for at least a particular image sensing pixel of the plurality of image sensing pixels, the length or the width of the photon reception area is smaller than about 80% of a pixel pitch measurement between the particular image sensing pixel and an adjacent image sensing pixel of the plurality of image sensing pixels, wherein the length or the width of the photon reception area contributes to reduced volume of the photosensitive region to mitigate sensor noise for the image sensor, and
• a space between the photosensitive region of the particular image sensing pixel and the photosensitive region of the adjacent image sensing pixel comprises an intermediate silicon region that is connected to an intermediate semiconductor photodetector, wherein the intermediate semiconductor photodetector comprises a smaller size than the semiconductor photodetector of the particular image sensing pixel.