Multilayer junction photoelectric conversion element and method for manufacturing the same

A multilayer junction photoelectric conversion element comprising:

• a first electrode;
• a first photoactive layer including a perovskite semiconductor;
• a first passivation layer;
• a first doped layer;
• a second photoactive layer containing silicon;
• and
• a second electrode, in this order,
• wherein the multilayer junction photoelectric conversion element further comprises a light scattering layer including a plurality of mutually separated silicon alloy layers that penetrate a part of the first passivation layer and electrically connect the first photoactive layer and the first doped layer, and a texture structure on the back surface side of the second photoactive layer,
• a curvature radius of a boundary line between the silicon alloy layer and the first doped layer in a cross section parallel to a lamination direction of the first photoactive layer and the second photoactive layer is not constant,
• the refractive index of the light scattering layer is 1.4 to 1.8, and
• a distance from a back surface of the light scattering layer to the back surface of the second photoactive layer is 100 to 400 μm.