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US 12,757,468 B2Granted
HEMT device with field plates
AssigneeGlobalFoundries U.S. Inc.
InventorsMichael J. Zierak, Steven J. Bentley, Santosh Sharma, Mark D. Levy, Johnatan A. Kantarovsky
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a structure which includes at least one gate structure over semiconductor material, the at least one gate structure comprising an active layer, a gate metal extending from the active layer and a sidewall spacer on sidewalls of the gate metal, and a field plate aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.
Claims19
A structure comprising:
- at least one gate structure over semiconductor material, the at least one gate structure comprising an active layer, a gate metal extending from the active layer and a sidewall spacer on sidewalls of the gate metal;
- and
- a field plate aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer, wherein the field plate is in contact with the sidewall spacer, and wherein the gate metal comprises a narrow stem portion and a wider overhanging portion being held over the field plate.
A structure comprising:
- at least one gate structure;
- and
- a field plate which vertically overlaps with a portion of the at least one gate structure, wherein the field plate is electrically isolated from the gate structure by sidewall spacers, and wherein the field plate is in contact with the sidewall spacers, and wherein a gate metal of the at least one gate structure comprises a narrow stem portion and a wider overhanging portion being held over the field plate.
A method comprising:
- forming at least one gate structure over semiconductor material, the at least one gate structure comprising an active layer, a gate metal extending from the active layer and a sidewall spacer on sidewalls of the gate metal;
- and
- forming a field plate aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer, wherein the field plate is in contact with the sidewall spacer, and wherein the gate metal comprises a narrow stem portion and a wider overhanging portion being held over the field plate.
Dependencies are inferred from the claim text.