Thin film transistor substrate and display apparatus comprising the same
AssigneeLG Display Co., Ltd.
InventorsJaeyoon Park, Jinwon Jung, Hyeonjoo Seul, Sungju Choi, Dongyeon Kang
Life of this patent
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Abstract
A thin film transistor substrate includes a substrate; an active layer on the substrate; a gate electrode on the active layer; a source electrode connected to a first side of the active layer, and a drain electrode connected to a second side of the active layer. The gate electrode includes a body portion and at least one first protrusion on a first side of the body part with the at least one first protrusion overlapping the active layer in a plan view.
Claims22
A thin film transistor substrate, comprising:
- a substrate;
- an active layer on the substrate;
- a gate electrode on the active layer;
- a source electrode connected to a first side of the active layer;
- and
- a drain electrode connected to a second side of the active layer,
- wherein the active layer includes a channel area, a source area at a first side of the channel area, the source area being conductive and connected to the source electrode;
- and a drain area at a second side of the channel area, the drain area being conductive and connected to the drain electrode,
- wherein the gate electrode includes a body portion and at least one first protrusion on a first side of the body portion, the at least one first protrusion overlapping the source area in a plan view, and
- wherein the channel area has a plurality of first concave portions, and the source area has a plurality of first convex portions in a region corresponding to the plurality of first concave portions.
A thin film transistor substrate, comprising:
- a substrate;
- an active layer on the substrate;
- a gate electrode on the active layer;
- a source electrode connected to a first side of the active layer;
- and
- a drain electrode connected to a second side of the active layer,
- wherein the gate electrode includes a body portion and at least one first protrusion on a first side of the body portion, the at least one first protrusion overlapping the active layer in a plan view, and
- wherein the active layer includes at least one active hole, and the at least one active hole does not overlap the at least one first protrusion.
A thin film transistor substrate, comprising:
- a substrate;
- an active layer on the substrate;
- a gate electrode on the active layer;
- a source electrode connected to a first side of the active layer;
- and
- a drain electrode connected to a second side of the active layer,
- wherein the gate electrode includes a body portion and at least one first protrusion on a first side of the body portion, the at least one first protrusion overlapping the active layer in a plan view,
- wherein the active layer includes a channel area,
- wherein the channel area has a plurality of first concave portions, and
- wherein each first concave portion is spaced apart by a width of the first protrusion.
A thin film transistor substrate, comprising:
- a substrate;
- an active layer on the substrate;
- a gate electrode on the active layer;
- a source electrode connected to a first side of the active layer;
- and
- a drain electrode connected to a second side of the active layer,
- wherein the gate electrode includes a body portion and at least one first protrusion on a first side of the body portion, the at least one first protrusion overlapping the active layer in a plan view,
- wherein the active layer includes a channel area,
- wherein the channel area has a plurality of first concave portions and a plurality of second concave portions,
- wherein the plurality of first concave portions and the plurality of second concave portions are symmetrical disposed with respect to the channel area portion, and
- wherein the plurality of first concave portions and the plurality of second concave portions are formed of the same size.
Dependencies are inferred from the claim text.