Light detection element, electronic device, and manufacturing method of light detection element

A manufacturing method of a light detection element including:

• a light reception section that generates a charge according to an amount of received light;
• a voltage conversion section that acquires the charge generated in the light reception section via an input node, converts the charge into a voltage signal, and outputs the voltage signal from an output node;
• a signal amplification section that amplifies the voltage signal;
• and
• a comparison section that compares a voltage of the voltage signal amplified by the signal amplification section with a predetermined voltage,
• the voltage conversion section including:
• an amplification circuit connected between the input node and the output node;
• and
• a feedback circuit connected between the input node and the output node, and
• a gate insulating film of at least one transistor included in the feedback circuit being thicker than gate insulating films of transistors included in the signal amplification section and the comparison section, the manufacturing method comprising
• forming the gate insulating film of at least one transistor included in the feedback circuit by local oxidation of silicon (LOCOS).