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US 12,756,160 B2Granted
Surface emitting laser
AssigneeInstitute of Science Tokyo
InventorsFumio Koyama, Hameeda Ibrahim, Xiaodong Gu, Ahmed Hassan
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Abstract
A surface emitting laser has a Vertical-Cavity Surface emitting laser (VCSEL) structure. The VCSEL structure includes an aperture provided by a current confinement structure. An optically discontinuous portion is formed in a top Distributed Bragg Reflector (DBR) of the VCSEL structure such that it is arranged in a region with a gap between it and the aperture.
Claims17
A surface emitting laser comprising:
- a Vertical-Cavity Surface Emitting Laser (VCSEL) structure having:
- a top Distributed Bragg Reflector (DBR);
- and
- an oxide aperture provided by a current confinement structure and formed by selective oxidation;
- and
- an optically discontinuous portion formed in the top DBR,
- wherein the optically discontinuous portion is disposed spaced apart from the oxide aperture in a plan view of the surface-emitting laser, and
- wherein the top DBR comprises a multilayer structure including a semiconductor DBR and a dielectric DBR,
- a bottom surface of the optically discontinuous portion is physically in contact with the semiconductor DBR, and
- a top surface and a side surface of the optically discontinuous portion is physically in contact with the dielectric DBR, wherein a portion of the semiconductor DBR which overlaps with the oxide aperture has a thickness that is smaller than that of the other portions of the semiconductor DBR.
7 more elements
A surface emitting laser comprising:
- a Vertical-Cavity Surface emitting laser (VCSEL) structure having:
- a top Distributed Bragg Reflector (DBR);
- and
- an oxide aperture provided by a current confinement structure and formed by selective oxidation;
- and
- an optically discontinuous portion formed in the top DBR,
- wherein, in a plan view of the surface-emitting laser, the optically discontinuous portion is arranged in a region spaced apart from the oxide aperture with a gap therebetween such that the optically discontinuous portion reflects a slow light towards the oxide aperture,
- the top DBR comprises a multilayer structure including a semiconductor DBR and a dielectric DBR, and
- a top surface and a side surface of the optically discontinuous portion is physically in contact with the dielectric DBR,
- in a plan view of the surface emitting laser, a portion in which the oxide aperture is formed constitutes a main resonator, and a region sandwiched between the oxide aperture and the optically discontinuous portion constitutes an external resonator,
- wherein the optically discontinuous portion is arranged so as to reflect slow light propagating through the external resonator toward the main resonator, and
- wherein a portion of the semiconductor DBR which overlaps the oxide aperture has a thickness that is smaller than that of the other portions of the semiconductor DBR.
9 more elements
Dependencies are inferred from the claim text.