SOC stack comprising integrated interconnect and spacer

Solid Oxide Cell stack comprising a plurality of stacked cell units, each cell unit comprises a cell layer and an interconnect layer, one interconnect layer separates one cell layer from the adjacent cell layer in the cell stack, wherein the interconnect layer comprises an integrated interconnect and spacer made from one piece of plate with the thickness, T, the spacer is formed by at least a part of the edges of the interconnect which is bent 180° a number, N, of times to provide a spacer covering at least a part of the edges of the interconnect, so said spacer and interconnect together form an edge of at least a part of the integrated interconnect and spacer with a thickness equal to or less than (1+N) times the thickness of the plate T, wherein the interconnect comprises a central through-hole and a periphery through-hole, and wherein the spacer of the integrated interconnect and spacer further forms at least one flow distributor around the central through-hole and a contiguous fluid tight edge around the periphery through-hole and at least one flow distributor adapted for external manifolding.