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US 12,755,941 B2Granted
Modification method and modification device
AssigneeTokyo Electron Limited
InventorsTakafumi Nogami, Kenichi Kote
Life of this patent
Estimating the term…
Abstract
A method of modifying a film formed on a substrate, includes: generating plasma by a microwave in an interior of a processing container in which a stage on which a substrate is placed is provided; and periodically applying a DC voltage to the stage in the interior of the processing container in which the plasma is generated by the generating the plasma, and irradiating the substrate with electrons in the plasma.
Claims9
A method of modifying a film formed on a substrate, the method comprising:
- generating plasma by a microwave in an interior of a processing container in which a stage on which a substrate is placed is provided;
- and
- periodically applying a DC voltage to the stage in the interior of the processing container in which the plasma is generated by the generating the plasma, and irradiating the substrate with electrons in the plasma,
- wherein in the generating the plasma, a gas species of a processing gas supplied to the interior of the processing container is He and N2, and a flow rate ratio of N2 to He is 9% or less.
1 more element
A modification device comprising:
- a processing container including a stage provided in an interior of the processing container, wherein a substrate on which a film to be modified is formed is placed on the stage;
- a generator configured to generate plasma by a microwave in the interior of the processing container;
- a voltage applier configured to apply a DC voltage to the stage;
- and
- a controller configured to control the voltage applier to periodically apply a DC voltage to the stage while controlling the generator to generate the plasma in the interior of the processing container,
- wherein in the generating the plasma, a gas species of a processing gas supplied to the interior of the processing container is He and N2, and a flow rate ratio of N2 to He is 9% or less.
3 more elements
Dependencies are inferred from the claim text.