Plasma processing apparatus

A plasma processing apparatus, comprising:

• a chamber configured to provide a processing space in the chamber;
• a substrate support provided inside the processing space;
• an upper electrode provided above the substrate support via the processing space;
• an emitter provided to emit electromagnetic waves into a plasma generating space and extending in a circumferential direction around a central axis of the chamber and the processing space;
• and
• a waveguide configured to supply the electromagnetic waves to the emitter,
• wherein the waveguide includes a resonator configured to provide a waveguide path,
• wherein the resonator includes a first short-circuit portion constituting one end of the waveguide path of the resonator and a plurality of second short-circuit portions constituting the other end of the waveguide path of the resonator or a plurality of beams provided along a third short-circuit portion constituted by a wall surface and constituting the other end of the waveguide path,
• wherein the plurality of second short-circuit portions or the plurality of beams are arranged axisymmetric around the central axis along the circumferential direction,
• wherein the plurality of second short-circuit portions or the plurality of beams and a plurality of gaps electromagnetically coupled to the emitter are arranged alternately along the circumferential direction around the central axis, and
• wherein a distance d in the circumferential direction between two arbitrary second short-circuit portions adjacent in the circumferential direction among the plurality of second short-circuit portions or between two arbitrary beams adjacent in the circumferential direction among the plurality of beams satisfies a following formula (1);
• 0.05
• λ
• ⁢
• g
• <
• d
• <
• 0.3
• λ
• ⁢
• g
• ,
• (
• 1
• )
• where λg is a wavelength of the electromagnetic waves in the waveguide path of the resonator.