E-beam exposure method and mask manufacturing method comprising the same
AssigneeSamsung Electronics Co., Ltd.
InventorJungwook Shon
Life of this patent
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Abstract
An E-beam exposure method may include receiving exposure information on a pattern subject to exposure, determining on beams and off beams of an E-beam exposure apparatus, determining an exposure time in an exposure process, performing the exposure process using the E-beam exposure apparatus, measuring a current of the off beams on an aperture plate of the E-beam exposure apparatus, and a first determination of determining whether the current is within a reference range. If the current is not within the reference range in the first determination, the determining the exposure time may be performed and the exposure time may be changed.
Claims20
An E-beam exposure method comprising:
- receiving exposure information on a pattern subject to exposure;
- determining on beams and off beams of an E-beam exposure apparatus;
- determining an exposure time in an exposure process;
- performing the exposure process using the E-beam exposure apparatus;
- measuring a current of the off beams on an aperture plate of the E-beam exposure apparatus;
- and
- a first determination of determining whether the current is within a reference range, wherein
- in response to the current not being within the reference range in the first determination, the determining the exposure time is performed and the exposure time is changed.
An E-beam exposure method comprising:
- receiving information on a pattern subject to exposure;
- determining on beams and off beams of an E-beam exposure apparatus;
- determining an exposure time in an exposure process;
- performing the exposure process using the E-beam exposure apparatus;
- measuring a first current of the off beams using a sensor on an aperture plate of the E-beam exposure apparatus;
- calculating a second current by normalizing the first current;
- calculating a third current by sampling the second current;
- a first determination of determining whether the exposure process for a set area is completed;
- and
- in response to determining the exposure process is not completed in the first determination, performing a second determination of determining whether the third current is within a reference range, wherein
- in response to the third current not being within the reference range in the second determination, the determining the exposure time is performed and the exposure time is changed, and
- in response to the third current being within the reference range in the second determination, the exposure process is performed without changing the exposure time.
A mask manufacturing method comprising:
- preparing a blank mask;
- applying an E-beam resist layer onto the blank mask;
- performing an E-beam exposure process on the E-beam resist layer;
- developing the E-beam resist layer to form an E-beam resist pattern;
- and
- etching a lower layer by using the E-beam resist pattern as an etch mask, wherein
- the performing of the E-beam exposure process includes receiving exposure information on a pattern subject to exposure, determining on beams and off beams of an E-beam exposure apparatus, determining an exposure time in an exposure process, performing the exposure process using the E-beam exposure apparatus, measuring a current of the off beams on an aperture plate of the E-beam exposure apparatus, and a first determination of determining whether the current is within a reference range, and
- in response to the current not being within the reference range in the first determination, the determining the exposure time is performed and the exposure time is changed.
Dependencies are inferred from the claim text.