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AssigneeChongqing University
InventorsYuan Yuan, Guoyong Liu, Xu Dai, Huiying Xiang, Ruijin Liao
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An aluminum oxide film structure for heat dissipation and cooling of a high-voltage bare conductor and a preparation method, relating to the technical field of wires and cables. The aluminum oxide film structure is an aluminum oxide film layer having a single hole or dual-layer composite hole structure and generated on the outermost surface of a pure aluminum conductor or aluminum conductor aluminum clad steel reinforced; the thickness of the aluminum oxide film layer is 15-30 μm; the hole gap range of single holes or dual-layer composite holes is 100-300 nm; and the hole diameter range of the single holes or the dual-layer composite holes is 30-300 nm. Compared with a bare conductor, the aluminum oxide film structure enables an aluminum conductor or an aluminum stranded conductor to have low-current temperature rise characteristics at the same current and better faster heat dissipation and cooling characteristics.
An alumina film structure for heat dissipation of a bare conductor under high voltage, wherein the alumina film structure is a porous alumina film layer formed on a surface of an outermost layer of an aluminum conductor or an aluminum stranded conductor, the porous alumina film layer comprises a single-layer or two-layer composite porous structure;
Use of a porous alumina film structure in heat dissipation of a bare conductor under high voltage, wherein a thickness of the porous alumina film structure is 15-30 μm;
Dependencies are inferred from the claim text.