Systems and methods for high performance read with row-to-row threshold tracking in NVM

Abstract

The present disclosure relates to a flash memory system may include a non-volatile memory and a circuit. The non-volatile memory may include one or more blocks, each block including a plurality of rows of cells. The circuit for performing operations on the non-volatile memory, may obtain a row identifier identifying a row of a target page, among the plurality of rows. The circuit may generate, by a machine learning model, one or more voltage thresholds for a read operation, based on the row identifier. The circuit may perform the read operation on the target page of the non-volatile memory with the one or more voltage thresholds.

Dependencies are inferred from the claim text.