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US 12,754,675 B2Granted
Determining grown bad block allowance associated with a memory device
AssigneeMicron Technology, Inc.
InventorsYang Liu, Fanqi Wu, Aaron Lee
Life of this patent
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Abstract
A processing device determines, during a pre-runtime stage associated with a memory device, a first relationship comprising a first modeling of a first parameter of the memory device and a second parameter of the memory device. During the pre-runtime stage, a grown bad block allowance is determined based on the first relationship associated with the memory device. The grown bad blocks allowance is stored in a storage location associated with the memory device, where the memory device uses the grown bad blocks allowance during runtime.
Claims20
A method comprising:
- generating, by a processing device executing a model during a pre-runtime stage associated with a memory device, a first modeling of a first parameter of the memory device;
- generating, by the processing device executing the model during the pre-runtime stage, a second modeling of a second parameter of the memory device;
- determining, by the processing device during the pre-runtime stage associated with the memory device, a first relationship comprising the first modeling of the first parameter of the memory device and the second modeling of the second parameter of the memory device, wherein the first parameter corresponds to a first performance requirement associated with the memory device, and wherein the second parameter corresponds to a second performance requirement associated with the memory device;
- determining, during the pre-runtime stage, a grown bad block allowance associated with the memory device, wherein the grown bad block allowance is equal to a difference between a first number of valid blocks value and a second number of valid blocks value determined based on the first relationship;
- and
- storing the grown bad block allowance in a storage location associated with the memory device, wherein a controller of the memory device accesses the storage location and uses the grown bad block allowance during runtime operation of the memory device.
3 more elements
A system comprising:
- a memory comprising instructions;
- and
- a processing device, operatively coupled to the memory, to execute the instructions to perform operations comprising:
- executing a model during a pre-runtime stage associated with a memory device to generate a first modeling of a first parameter of the memory device;
- executing the model during the pre-runtime stage to generate a second modeling of a second parameter of the memory device;
- determining, by the processing device during the pre-runtime stage associated with the memory device, a first relationship comprising the first modeling of the first parameter of the memory device and the second modeling of the second parameter of the memory device, wherein the first parameter corresponds to a first performance requirement associated with the memory device, and wherein the second parameter corresponds to a second performance requirement associated with the memory device;
- determining, during the pre-runtime stage, a grown bad block allowance associated with the memory device, wherein the grown bad block allowance is equal to a difference between a first number of valid blocks value and a second number of valid blocks value determined based on the first relationship;
- and
- storing the grown bad block allowance in a storage location associated with the memory device, wherein a controller of the memory device accesses the storage location and uses the grown bad block allowance during runtime operation of the memory device.
6 more elements
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- executing a model during a pre-runtime stage associated with a memory device to generate a first modeling of a first parameter of the memory device;
- executing the model during the pre-runtime stage to generate a second modeling of a second parameter of the memory device;
- determining, by the processing device during the pre-runtime stage associated with the memory device, a first relationship comprising the first modeling of the first parameter of the memory device and the second modeling of the second parameter of the memory device, wherein the first parameter corresponds to a first performance requirement associated with the memory device, and wherein the second parameter corresponds to a second performance requirement associated with the memory device,
- determining, during the pre-runtime stage, a grown bad block allowance associated with the memory device, wherein the grown bad block allowance is equal to a difference between a first number of valid blocks value and a second number of valid blocks value determined based on the first relationship;
- and
- storing the grown bad block allowance in a storage location associated with the memory device, wherein a controller of the memory device accesses the storage location and uses the grown bad block allowance during runtime operation of the memory device.
3 more elements
Dependencies are inferred from the claim text.