Bandgap reference circuit with leakage current compensation

A bandgap reference circuit, comprising:

• a first bipolar junction transistor (BJT) biased at a first current density, configured to determine a negative temperature coefficient signal;
• a second bipolar junction transistor biased at a second current density, wherein the first current density is greater than the second current density, such that a base-emitter voltage of the first bipolar junction transistor and a base-emitter voltage of the second bipolar junction transistor have a base-emitter voltage difference;
• a third bipolar junction transistor, wherein a base of the third bipolar junction transistor is biased in an off state, and a collector of the third bipolar junction transistor is coupled to a reference voltage, such that a second leakage current between the collector and a body of the third bipolar junction transistor compensates for a first leakage current component in the reference voltage;
• a differential voltage sensing resistor, connected in series between a supply potential and the second bipolar junction transistor to form a sub-branch, wherein the differential voltage sensing resistor is electrically coupled closer to the supply potential side;
• and
• a feedback circuit, configured to generate the reference voltage and to control the sub-branch and the first bipolar junction transistor to have the same voltage drop, such that the voltage drop across the differential voltage sensing resistor includes the base-emitter voltage difference, thereby determining a positive temperature coefficient signal.