Silicon-on-insulator photonic integrated circuits with integrated silicon photonic component and silicon/nitrogen photonic component
AssigneeHewlett Packard Enterprise Development LP
InventorSagi Varghese Mathai
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Abstract
A photonic integrated circuit may comprise a silicon substrate, a buried oxide (BOX) layer disposed on the silicon substrate, a silicon device layer disposed on the BOX layer, a first silicon waveguide in the silicon device layer, and a silicon/nitrogen waveguide optical amplifier disposed on the BOX layer. The first silicon waveguide comprises a first silicon waveguide core formed in the silicon device layer. The silicon/nitrogen waveguide optical amplifier comprises a first silicon/nitrogen waveguide core portion disposed on the BOX layer and optically coupled with the first silicon waveguide core. The first silicon/nitrogen waveguide core portion comprises a compound of silicon and nitrogen.
Claims20
A photonic integrated circuit, comprising:
- a silicon substrate;
- a buried oxide (BOX) layer disposed on the silicon substrate;
- a silicon device layer disposed on the BOX layer;
- a first silicon waveguide comprising a first silicon waveguide core formed in the silicon device layer;
- and
- a silicon/nitrogen waveguide optical amplifier comprising a first silicon/nitrogen waveguide core portion disposed on the BOX layer and optically coupled with the first silicon waveguide core, wherein first silicon/nitrogen waveguide core portion comprises a compound of silicon and nitrogen.
A method of forming a photonic integrated circuit, comprising:
- providing a silicon-on-insulator (SOI) wafer comprising a silicon substrate, a buried oxide (BOX) layer, and a silicon device layer;
- forming a silicon waveguide core in the silicon device layer;
- and
- forming a silicon/nitrogen waveguide core on the BOX layer such that the silicon/nitrogen waveguide core is optically coupled with the silicon waveguide core, wherein silicon/nitrogen waveguide core comprises a compound of silicon and nitrogen.
A method of forming a photonic integrated circuit, comprising:
- providing a silicon-on-insulator (SOI) wafer comprising a first substrate, a buried oxide (BOX) layer, and a silicon device layer;
- forming a silicon waveguide core formed in the silicon device layer;
- providing a silicon/nitrogen wafer comprising second substrate and a silicon/nitrogen layer, wherein silicon/nitrogen layer comprises a compound of silicon and nitrogen;
- forming a silicon/nitrogen waveguide core portion in the silicon/nitrogen layer;
- and
- bonding the silicon/nitrogen wafer to the SOI wafer such that the silicon/nitrogen waveguide core overlaps and is optically coupled with the silicon waveguide core.
Dependencies are inferred from the claim text.