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US 12,753,502 B2Granted
Shower head, electrode unit, gas supply unit, substrate processing apparatus, and substrate processing system
AssigneeTokyo Electron Limited
InventorsRyutaro Suda, Maju Tomura, Susumu Nogami, Hideaki Yakushiji, Takahiro Murakami, Yusuke Wako
Life of this patent
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Abstract
A shower head for plasma processing includes a body part having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces. The plurality of inner side surfaces is configured to define a plurality of gas holes penetrating through the body part from the first surface to the second surface. The second surface is made of a first corrosion-resistant material.
Claims5
A shower head for plasma processing, comprising:
- a body part comprised of silicon carbide, the body part including:
- a first surface configured to be exposed to an internal space of a plasma processing chamber and including a plurality of first holes;
- a second surface opposite to the first surface and including a plurality of second holes, the second surface being disposed in a gap defined by the body part and a support body of an upper electrode;
- a plurality of inner side surfaces;
- and
- a natural oxide film disposed on the second surface and the plurality of inner side surfaces, the natural oxide film being made of a first corrosion-resistant material,
- wherein the plurality of inner side surfaces define a plurality of gas holes penetrating through the body part from the first surface to the second surface,
- the natural oxide film is formed from the silicon carbide of the body part,
- the first corrosion-resistant material has a higher corrosion resistance to gas including at least one selected from a group consisting of F2, XeF2, WF6, MoF6, IF7, HF, and ClF3 than the first surface of the body part,
- a diameter of the plurality of first holes is substantially equal to a diameter of the plurality of second holes,
- the shower head is configured to flow a processing gas toward the plurality of gas holes and into the gap defined by the body part and the support body of the upper electrode, and
- the natural oxide film is not formed on the first surface.
9 more elements
A gas supply for plasma processing, comprising:
- an annular body part comprised of silicon carbide, the annular body part including:
- a first surface configured to be exposed to an internal space of a plasma processing chamber and including a plurality of first holes;
- a second surface opposite to the first surface and including a plurality of second holes, the second surface being disposed in a gap defined by the annular body part and a support body of an upper electrode;
- a plurality of inner side surfaces;
- and
- a natural oxide film disposed on the second surface and the plurality of inner side surfaces, the natural oxide film being made of a first corrosion-resistant material,
- wherein the plurality of inner side surfaces define a plurality of gas holes penetrating through the body part from the first surface to the second surface;
- and
- a gas supply path disposed inside of the annular body part and communicating with the plurality of gas holes,
- wherein the natural oxide film is formed from the silicon carbide of the annular body part,
- the first corrosion-resistant material has a higher corrosion resistance to gas including at least one selected from a group consisting of F2, XeF2, WF6, MoF6, IF7, HF, and ClF3 than the first surface of the annular body part,
- a diameter of the plurality of first holes is substantially equal to a diameter of the plurality of second holes,
- the annular body part is configured to flow a processing gas toward the plurality of gas holes and into the gap defined by the annular body part and the support body of the upper electrode, and
- the natural oxide film is not formed on the first surface.
11 more elements
Dependencies are inferred from the claim text.