Packaged integrated circuit devices with enhanced dam structures that provide increased yield and reliability

A semiconductor package, comprising:

• a substrate;
• a first semiconductor chip extending on an upper surface of the substrate;
• electrically conductive bumps extending between and connected to the substrate and the first semiconductor chip;
• a non-conductive film layer having at least a portion extending between the electrically conductive bumps;
• second semiconductor chips extending on the upper surface of the substrate;
• and
• electrically conductive wires connecting one of the second semiconductor chips and the upper surface of the substrate;
• and
• wherein the upper surface of the substrate includes a dam protruding between a region vertically overlapping another one of the second semiconductor chips and a region vertically overlapping the first semiconductor chip, and protruding between a region connected to the wires and the region vertically overlapping the first semiconductor chip;
• and
• wherein the upper surface of the substrate further includes a trench recessed alongside at least a portion of the dam.

A semiconductor package, comprising:

• a substrate;
• first and second semiconductor chips extending on an upper surface of the substrate;
• electrically conductive bumps extending between and connected to the substrate and the first semiconductor chip;
• and
• a non-conductive film layer having at least a portion extending between the electrically conductive bumps;
• wherein the upper surface of the substrate includes a dam, which protrudes and has a shape extending to surround a region overlapping the first semiconductor chip, and a trench that is recessed and has a shape extending partially alongside portion of the dam, and
• wherein the trench includes at least four trenches, with two of the trenches surrounded by the dam and spaced apart from each other, and another two of the trenches are spaced apart from each other without being surrounded by the dam.