Edge-emitting semiconductor devices and related methods

A light-emitting diode (LED) device, comprising:

• a first active LED structure comprising a first n-type layer, a first active layer, and a first p-type layer, the first active LED structure forming a first edge that includes portions of the first n-type layer and the first p-type layer;
• a first n-contact pad electrically coupled to the first n-type layer at the first edge;
• a first p-contact pad electrically coupled to the first p-type layer at the first edge, and a second active LED structure with a second n-type layer, a second active layer, and a second p-type layer, the second active LED structure being arranged relative to the first active LED structure such that the first edge includes portions of the second n-type layer and the second p-type layer.

A light-emitting diode (LED) array, comprising:

• an encapsulation layer;
• and a plurality of LED chips in the encapsulation layer, each LED chip of the plurality of LED chips comprising an active layer that extends in a perpendicular direction between a first face of the encapsulation layer and a second face of the encapsulation layer, wherein a pitch between adjacent LED chips of the plurality of LED chips is in a range from 10 nanometers (nm) to 1000 nm.