Semiconductor package manufactured through a thermocompression process using a non-conductive film (NCF)

A semiconductor package comprising:

• a buffer die;
• a first core die disposed on the buffer die;
• a second core die disposed on the first core die;
• a non-conductive film (NCF) disposed between the first core die and the second core die and configured for thermocompression bonding the first core die and the second core die to each other;
• a first molding layer at least partially surrounding a side surface of the second core die;
• and
• a second molding layer that surrounds the NCF and the first molding layer and molds the first core die, the second core die, and the buffer die,
• wherein a side surface of the first molding layer and a side surface of the NCF form a coplanar surface.

A semiconductor package comprising:

• a buffer die;
• a core die stack disposed on the buffer die, and including a first core die disposed on the buffer die, a second core die disposed on the first core die, and a third core die disposed on the second core die;
• a non-conductive film (NCF) configured for thermocompression bonding the core die stack;
• a first molding layer at least partially surrounding a portion of a side surface of the core die stack;
• and
• a second molding layer surrounding the core die stack, the NCF, and the first molding layer, and molding the core die stack and the buffer die,
• wherein the NCF comprises:
• a first horizontal portion disposed between the first core die and the second core die;
• a second horizontal portion disposed between the second core die and the third core die;
• and
• a vertical portion at least partially surrounding a side surface of the first core die and a side surface of the second core die and connecting the first horizontal portion to the second horizontal portion, and
• wherein a side surface of the first molding layer and a side surface of the vertical portion of the NCF form a coplanar surface.