Selective alteration of interconnect pads for direct bonding

A bonded structure comprising:

• a first element having a first bonding surface comprising a first nonconductive material and a plurality of first contact pads at least partially embedded in the first nonconductive material, the first contact pads electrically connected to one or more first microelectronic devices in the first element by way of one or more traces of a plurality of first traces;
• and
• a second element having a second bonding surface comprising a second nonconductive material and a plurality of second contact pads at least partially embedded in the second nonconductive material, the second contact pads electrically connected to one or more second microelectronic devices in the second element by way of one or more second traces,
• wherein the second bonding surface is directly bonded to the first bonding surface without an intervening adhesive to form a bonding interface, and wherein at least one first trace of the plurality of first traces extends between at least one of the one or more first microelectronic devices and an omitted contact pad region at the bonding interface and is at least partially embedded in the first nonconductive material, the omitted contact pad region comprising an insulating material, wherein the at least one first trace terminates at the omitted contact pad region and is electrically isolated from any contact pad.