Package structure with transmission line and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorWen-Shiang Liao
Life of this patent
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Abstract
A package structure and a formation method are provided. The package structure includes a chip structure bonded to a substrate through dielectric-to-dielectric bonding and metal-to-metal bonding and interconnect dielectric layers formed over the chip structure. The package structure further includes interconnect conductive structures formed in the interconnect dielectric layers and a transmission line formed in the interconnect dielectric layers. The package structure further includes a magnetic structure formed in the interconnect dielectric layers and separated from the transmission line by the interconnect dielectric layers. In addition, the magnetic structure is electrically isolated from the chip structure and the interconnect conductive structures.
Claims20
A package structure, comprising:
- a chip structure bonded to a bonding structure over a substrate through dielectric-to-dielectric bonding and metal-to-metal bonding;
- a dielectric layer laterally surrounding the chip structure;
- interconnect dielectric layers formed over the chip structure;
- interconnect conductive structures formed in the interconnect dielectric layers;
- a transmission line formed in the interconnect dielectric layers;
- and
- a magnetic structure formed in the interconnect dielectric layers and separated from the transmission line by the interconnect dielectric layers, wherein the magnetic structure is electrically isolated from the chip structure and the interconnect conductive structures, and the dielectric layer continuously extends from a bottom surface of the magnetic structure to a top surface of the bonding structure.
A package structure, comprising:
- a chip structure bonded to a substrate through dielectric-to-dielectric bonding and metal-to-metal bonding;
- a dielectric layer formed over the substrate and covering sidewall surfaces of the chip structure;
- through dielectric vias formed through the dielectric layer;
- and
- an interconnect structure formed over the dielectric layer and the chip structure, wherein the interconnect structure comprises:
- a transmission line electrically connect to the chip structure;
- a magnetic structure spaced apart from the transmission line by a first space, wherein the magnetic structure partially overlaps with the chip structure and partially overlaps with the dielectric layer, and the magnetic structure is electrically isolated from the transmission line, the chip structure, and the through dielectric vias;
- and
- interconnect dielectric layers formed around the transmission line and the magnetic structure, wherein the first space between the magnetic structure and the transmission line is filled by the interconnect dielectric layers.
A method for forming a package structure, comprising:
- forming a first bonding structure over a substrate, wherein the first bonding structure comprises a first dielectric layer and first conductive pads formed in the first dielectric layer;
- bonding a second bonding structure of a chip structure to the first bonding structure, wherein the second bonding structure comprises a second dielectric layer and second conductive pads formed in the second dielectric layer, and the second conductive pads are bonded to the first conductive pads, and the second dielectric layer is bonded to the first dielectric layer;
- forming a third dielectric layer over the first bonding structure and around the chip structure;
- forming through dielectric vias through the third dielectric layer and electrically connected to the first conductive pads;
- forming an interconnect structure over the third dielectric layer, comprising:
- forming a first interconnect dielectric layer;
- forming a second interconnect dielectric layer over the first interconnect dielectric layer, wherein a transmission line is formed in the second interconnect dielectric layer;
- forming a third interconnect dielectric layer over the second interconnect dielectric layer;
- and
- forming a first magnetic portion through the first interconnect dielectric layer, the second interconnect dielectric layer, and the third interconnect dielectric layer,
- wherein the transmission line is electrically connected to the chip structure and is electrically isolated from the first magnetic portion.
Dependencies are inferred from the claim text.