Nitride semiconductor device with embedded metal in trench of substrate
AssigneeRohm Co., Ltd.
InventorKeita Shikata
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Abstract
A nitride semiconductor device is a nitride semiconductor device including a substrate that has a first main surface and a second main surface at an opposite side thereto and a nitride epitaxial layer that is formed on the first main surface. The nitride semiconductor device has, in plan view, an active region inside the nitride epitaxial layer in which a two-dimensional electron gas can form and an inactive region inside the nitride epitaxial layer in which the two-dimensional electron gas is not formed and includes trenches that, in at least the inactive region among the active region and the inactive region, are formed in the substrate and are dug in from the second main surface toward the first main surface and embedded metals that are formed inside the trenches.
Claims20
A nitride semiconductor device comprising:
- a substrate that has a first main surface and a second main surface at an opposite side thereto;
- and a nitride epitaxial layer that is formed on the first main surface;
- and
- wherein the nitride semiconductor device has, in plan view, an active region inside the nitride epitaxial layer in which a two-dimensional electron gas can form and an inactive region inside the nitride epitaxial layer in which the two-dimensional electron gas is not formed and
- comprises:
- a trench that, in at least the inactive region among the active region and the inactive region, is dug in from the second main surface of the substrate toward the first main surface of the substrate;
- and
- an embedded metal that is formed inside the trench, wherein
- the nitride epitaxial layer comprises a first nitride semiconductor layer that constitutes an electron transit layer,
- an upper surface of the first nitride semiconductor layer on the side opposite to the substrate has a high step portion and a low step portion defined by a step, and
- a region in which the high step portion is present in plan view is the active region, and a region in which the low step portion is present in plan view is the inactive region.
Dependencies are inferred from the claim text.