Method for manufacturing and module of a semiconductor power module with heat dissipation function

A method for manufacturing a semiconductor power module, comprising:

• providing metal substrate structure with a metal top layer, a metal bottom layer, and a dielectric layer that is coupled to both the metal top layer and the metal bottom layer in between with respect to a stacking direction of the metal substrate structure,
• providing a housing configured to enclose electronics of the semiconductor power module, wherein the housing comprises a top wall and side walls with given lengths,
• providing at least one terminal with a given length, and
• coupling the at least one terminal, the housing and the metal substrate structure together such that the side walls are coupled to the metal substrate structure and the at least one terminal is arranged inside the housing and coupled to a lower surface of the top wall and coupled to an upper surface of the metal top layer, wherein the length of at least one terminal is configured in coordination with a distance between the lower surface of the top wall and the upper surface of the metal top layer adjacent to the side walls, respectively,
• wherein the length of the at least one terminal exceeds the distance between the lower surface of the top wall and the upper surface of the metal top layer, and thereby providing a compressive load on the metal substrate structure due to the at least one terminal such that the metal substrate structure is bent in a predetermined manner and comprises a convex shape in interaction with the housing and the at least one terminal, and
• wherein the metal substrate structure is bent outward away from the housing due to the length of the at least one terminal exceeding the distance.