Connecting structure comprising isolation between connecting vias and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia Chen Lee, Chia-Tien Wu, Shih-Wei Peng, Kuan Yu Chen
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Abstract
A connecting structure includes a first dielectric layer, a first connecting via in the first dielectric layer, a second connecting via in the first dielectric layer, and an isolation between the first connecting via and the second connecting via. The isolation separates the first and second connecting vias from each other. The first connecting via, the isolation and the second connecting via are line symmetrical about a central line perpendicular to a top surface of the first dielectric layer.
Claims20
A connecting structure comprising:
- a first dielectric layer;
- a first connecting via in the first dielectric layer;
- a first L-shaped barrier layer disposed between the first dielectric layer and the first connecting via and lining a bottom surface of the first connecting via;
- a second connecting via in the first dielectric layer;
- a second L-shaped barrier layer disposed between the first dielectric layer and the second connecting via and lining a bottom surface of the second connecting via;
- an isolation between the first connecting via and the second connecting via and separating the first connecting via and the second connecting via from each other;
- a first L-shaped liner disposed between the first L-shaped barrier layer and the first connecting via;
- and
- a second L-shaped liner disposed between the second L-shaped barrier layer and the second connecting via,
- wherein the first connecting via, the isolation and the second connecting via are line symmetrical about a central line or with different width perpendicular to a top surface of the first dielectric layer,
- wherein the first L-shaped liner and the second L-shaped liner are line symmetrical about the central line or having different configurations.
A connecting structure comprising:
- a layer;
- a first connecting via in the layer extending in a first direction;
- a second connecting via in the layer extending in the first direction;
- an isolation between the first connecting via and the second connecting via and separating the first connecting via and the second connecting via from each other, and extending in a second direction different from the first direction;
- a U-shaped liner between the isolation and the first connecting via, and between the isolation and the second connecting via;
- a first L-shaped liner disposed between the layer and the first connecting via;
- and
- a second L-shaped liner disposed between the layer and the second connecting via,
- wherein a width of the isolation is less than a width of the first connecting via measured in the first direction, and less than a width of the second connecting via measured in the first direction,
- wherein the U-shaped liner is in contact with the layer from a plan view, and each of the first L-shaped liner and the second L-shaped liner is directly coupled to a bottom of the U-shaped liner.
A method for forming a connecting structure, comprising:
- forming a dielectric layer over a substrate;
- forming a first opening in the dielectric layer;
- forming a conductive material to fill the first opening, wherein a top surface of the conductive material is aligned with a top surface of the dielectric layer;
- forming a second opening in the conductive material and dividing the conductive material to form a first connecting via and a second connecting via;
- and
- forming an isolation in the second opening, wherein the isolation separating the first connecting via and the second connecting via from each other.
Dependencies are inferred from the claim text.