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US 12,751,235 B2Granted
Gas supply system, substrate processing apparatus and method of manufacturing semiconductor device
AssigneeKokusai Electric Corporation
InventorTomonori Shibata
Life of this patent
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Abstract
According to the present disclosure, there is provided a technique of a gas supply system including: a plurality of first valves capable of opening and closing one or more flow paths through which one or more fluids that contributes to a processing of a substrate are supplied to a process chamber; a plurality of heating regions in which the plurality of first valves are heated; a heat equalizing structure provided at the plurality of heating regions; and an adjustment structure provided between each adjacent pair among the plurality of heating regions so as to adjust a heat conduction in the heat equalizing structure.
Claims17
A gas supply system comprising:
- a plurality of first valves capable of opening and closing one or more flow paths through which one or more fluids that contribute to a processing of a substrate are supplied to a process chamber;
- a base structure provided below the plurality of first valves to extend along a horizontal direction of the plurality of first valves;
- a plurality of heating regions in which the plurality of first valves are heated;
- a plurality of heat equalizing structures provided on the base structure at the plurality of heating regions;
- a plurality of adjustment structures provided on the base structure, interposed between the plurality of heat equalizing structures so as to fill a gap between each adjacent pair among the plurality of heat equalizing structures and configured to adjust a heat conduction between each adjacent pair among the plurality of heat equalizing structures;
- a plurality of body structures provided on the plurality of heat equalizing structures wherein the one or more flow paths are formed therein;
- and
- a plurality of heaters installed inside the plurality of heat equalizing structures and provided respectively for the plurality of heating regions,
- wherein the plurality of first valves are located closest to the process chamber among all valves provided in a piping in communication with the process chamber.
6 more elements
A substrate processing apparatus comprising:
- a gas supply system comprising:
- a plurality of first valves capable of opening and closing one or more flow paths through which one or more fluids that contribute to a processing of a substrate are supplied to a process chamber;
- a base structure provided below the plurality of first valves to extend along a horizontal direction of the plurality of first valves;
- a plurality of heating regions in which the plurality of first valves are heated;
- a plurality of heat equalizing structures provided on the base structure at the plurality of heating regions;
- a plurality of adjustment structures provided on the base structure, interposed between the plurality of heat equalizing structures so as to fill a gap between each adjacent pair among the plurality of heat equalizing structures and configured to adjust a heat conduction between each adjacent pair among the plurality of heat equalizing structures;
- a plurality of body structures provided on the plurality of heat equalizing structures wherein the one or more flow paths are formed therein;
- and
- a plurality of heaters installed inside the plurality of heat equalizing structures and provided respectively for the plurality of heating regions,
- wherein the plurality of first valves are located closest to the process chamber among all valves provided in a piping in communication with the process chamber.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- supplying a fluid that contributes to a processing of a substrate to the substrate through a gas supply system, wherein the gas supply system comprises:
- a plurality of first valves capable of opening and closing one or more flow paths through which one or more fluids that contribute to a processing of a substrate are supplied to a process chamber;
- a base structure provided below the plurality of first valves to extend along a horizontal direction of the plurality of first valves;
- a plurality of heating regions in which the plurality of first valves are heated;
- a plurality of heat equalizing structures provided on the base structure at the plurality of heating regions;
- a plurality of adjustment structures provided on the base structure, interposed between the plurality of heat equalizing structures so as to fill a gap between each adjacent pair among the plurality of heat equalizing structures and configured to adjust a heat conduction between each adjacent pair among the plurality of heat equalizing structures;
- a plurality of body structures provided on the plurality of heat equalizing structures wherein the one or more flow paths are formed therein;
- and
- a plurality of heaters installed inside the plurality of heat equalizing structures and provided respectively for the plurality of heating regions,
- wherein the plurality of first valves are located closest to the process chamber among all valves provided in a piping in communication with the process chamber.
7 more elements
Dependencies are inferred from the claim text.