Method for fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJohn Soo Kim, Gwan Ho Kim, Ji Yoon Kim, Heung Sik Park, Keun Hee Bai, Jong Min Baek, Do Haing Lee, Jong Sun Lee
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Abstract
A for fabricating a semiconductor device comprises forming a mask layer on a substrate, the mask layer defining a through hole that exposes an upper surface of the substrate, the mask layer comprising a first mask layer and a second mask layer, wherein the second mask layer is between the substrate and the first mask layer, and wherein the second mask layer comprises carbon. The method includes forming a liner layer on side walls of the through hole inside the second mask layer.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a mask layer on a substrate, the mask layer defining a through hole that exposes an upper surface of the substrate, the mask layer comprising a first mask layer and a second mask layer, wherein the second mask layer is between the substrate and the first mask layer, and wherein the second mask layer comprises carbon;
- and
- forming a liner layer on side walls of the through hole inside the second mask layer,
- wherein the liner layer is not on side walls of the through hole inside the first mask layer.
A method for fabricating a semiconductor device, the method comprising:
- forming a pair of line patterns on an insulating film, wherein the pair of line patterns extend in a first direction;
- forming a mask layer that defines a through hole that exposes an upper surface of the insulating film, wherein the through hole is between the pair of line patterns in a second direction;
- forming a liner layer on a first portion of side walls of the through hole;
- forming a blocking pattern in the through hole and on the liner layer;
- and
- removing, in response to forming the blocking pattern, the mask layer and the liner layer to expose the pair of line patterns.
A method for fabricating a semiconductor device, the method comprising:
- forming a second insulating film on a first insulating film that comprises a wiring pattern;
- forming a plurality of line patterns on the second insulating film, wherein the plurality of line patterns extend in a first direction;
- forming a first mask layer on the second insulating film and the plurality of line patterns, wherein the first mask layer comprises carbon;
- forming a second mask layer on the first mask layer;
- forming a photoresist pattern on the second mask layer, wherein the photoresist pattern defines an opening;
- forming a through hole within the first mask layer and the second mask layer, using the photoresist pattern as an etching mask, wherein the through hole exposes the second insulating film;
- forming a liner layer on a first mask layer and not on the second mask layer;
- and
- forming a blocking pattern on the liner layer to at least partially fill the through hole.
Dependencies are inferred from the claim text.