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US 12,751,216 B2Granted
Gate arrangement for quantum dot structures
AssigneeGlobalFoundries U.S. Inc.
InventorsThorsten E. Kammler, Peter Baars, Manfred Michael Zier
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to quantum dot structures and methods of manufacture. The structure includes: a plurality of barrier gates; a plurality of spin qubit gates interdigitated with the plurality of barrier gates; and access gates on opposing sides of the plurality of barrier gates.
Claims20
A structure comprising:
- a plurality of barrier gates, the plurality of barrier gates comprising conductive fill material surrounded by dielectric material;
- a plurality of spin qubit gates configured to define quantum dots in a semiconductor substrate interdigitated with the plurality of barrier gates;
- and
- access gates positioned on opposing sides of the plurality of barrier gates and adjacent to source and drain regions, the access gates configured to electrostatically control carrier access to the quantum dots defined by the plurality of spin qubit gates,
- wherein the plurality of barrier gates are positioned between adjacent spin qubit gates and configured to control tunneling between adjacent quantum dots.
2 more elements
A structure comprises:
- spin qubit gates configured to define quantum dots in a semiconductor substrate;
- barrier gates interdigitated with the plurality of spin qubit gates positioned between adjacent spin qubit gates and configured to control tunneling between adjacent quantum dots, the barrier gates comprising conductive fill material surrounded by dielectric material;
- access gates positioned on opposing sides of the barrier gates and configured to control carrier transport between raised source and drain regions and the quantum dots;
- raised source and drain regions adjacent to the access gates;
- and
- a liner material electrically isolating the spin qubit gates, the barrier gates and the access gates from one another, and electrically isolating the access gates from the raised source and drain regions.
3 more elements
A method comprising:
- forming a plurality of barrier gates, wherein the plurality of barrier gates comprise conductive fill material surrounded by dielectric material
- forming a plurality of spin qubit gates-configured to define quantum dots in a semiconductor substrate interdigitated with the plurality of barrier gates;
- and
- forming access gates on opposing sides of the plurality of barrier gates and adjacent to source and drain regions, the access gates configured to electrostatically control carrier access to the quantum dots,
- wherein the plurality of barrier gates are between adjacent spin qubit gates to control tunneling between adjacent quantum dots.
2 more elements
Dependencies are inferred from the claim text.