Display apparatus
AssigneeSamsung Display Co., Ltd.
InventorsJonghyun Choi, Changsoo Kim
Life of this patent
Estimating the term…
Abstract
A display apparatus including: a substrate; a first semiconductor layer on the substrate; a first gate layer on the first semiconductor layer; a second gate layer on the first gate layer; a second semiconductor layer on the second gate layer; a third gate layer on the second semiconductor layer; a 1-1st transparent electrode layer on a same layer as the second gate layer; and a 1-2nd transparent electrode layer on a same layer as the third gate layer and overlapping at least a portion of the 1-1st transparent electrode layer in a plan view.
Claims20
A display apparatus comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a first gate layer on the first semiconductor layer;
- a second gate layer on the first gate layer;
- a second semiconductor layer on the second gate layer;
- a third gate layer on the second semiconductor layer;
- a 1-1st transparent electrode layer on a same layer as the second gate layer;
- and
- a 1-2nd transparent electrode layer on a same layer as the third gate layer and overlapping at least a portion of the 1-1st transparent electrode layer in a plan view.
A display apparatus comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a first gate layer on the first semiconductor layer;
- a second gate layer on the first gate layer;
- a second semiconductor layer on the second gate layer;
- a third gate layer on the second semiconductor layer;
- a 2-1st transparent electrode layer on a same layer as the third gate layer and overlapping a portion of the second semiconductor layer in a plan view;
- and
- a first capacitor unit including a 1-1st electrode and a 1-2nd electrode insulated from the 1-1st electrode,
- wherein the 1-1st electrode is at least a portion of the 2-1st transparent electrode layer, and the 1-2nd electrode is a portion of the second semiconductor layer.
A display apparatus comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a first gate layer on the first semiconductor layer;
- a second gate layer on the first gate layer;
- a second semiconductor layer on the second gate layer;
- a third gate layer on the second semiconductor layer;
- a 3-1st transparent electrode layer on a same layer as the second gate layer and overlapping a portion of the second semiconductor layer in a plan view;
- and
- a third capacitor unit including a 3-1st electrode and a 3-2nd electrode insulated from the 3-1st electrode,
- wherein the 3-1st electrode is at least a portion of the 3-1st transparent electrode layer, and the 3-2nd electrode is a portion of the second semiconductor layer.
Dependencies are inferred from the claim text.