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US 12,751,127 B2Granted
Semiconductor-laminated substrate, light emitting component, and measurement apparatus
AssigneeFUJIFILM Business Innovation Corp.
InventorsTakashi Kondo, Michiaki Murata, Saori Nishizaki, Takafumi Higuchi
Life of this patent
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Abstract
A semiconductor-laminated substrate includes: a substrate; and a laminated structure that includes a first semiconductor laminate which is provided on the substrate and processed into a light emitting element and a second semiconductor laminate which is provided on the first semiconductor laminate and processed into at least one thyristor, in which the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element.
Claims9
A semiconductor-laminated substrate comprising:
- a substrate;
- and
- a laminated structure that includes a first semiconductor laminate which is provided on the substrate and processed into a light emitting element and a second semiconductor laminate which is provided on the first semiconductor laminate and processed into at least one thyristor,
- wherein the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element,
- wherein, in a reflectance spectrum obtained by irradiating the laminated structure and detecting reflected light, the two resonant wavelengths due to the effect of the thyristor are observed, after formation of the second semiconductor laminate, as two depressions in the reflectance spectrum, wherein one of the two resonant wavelengths is shorter than the resonant wavelength of the light emitting element and the other is longer than the resonant wavelength of the light emitting element.
2 more elements
A light emitting component comprising:
- a substrate on which a laminated structure including a first semiconductor laminate and a second semiconductor laminate overlapping with the first semiconductor laminate is formed;
- at least one light emitting element that is constituted by the first semiconductor laminate;
- and
- at least one thyristor that is constituted by the second semiconductor laminate and that causes the light emitting element to emit light or increase an amount of light emitted by turning on the light emitting element,
- wherein the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element,
- wherein, in a reflectance spectrum obtained by irradiating the laminated structure and detecting reflected light, the two resonant wavelengths due to the effect of the thyristor are observed, after formation of the second semiconductor laminate, as two depressions in the reflectance spectrum, wherein one of the two resonant wavelengths is shorter than the resonant wavelength of the light emitting element and the other is longer than the resonant wavelength of the light emitting element.
3 more elements
A measurement apparatus comprising:
- a substrate on which a laminated structure including a first semiconductor laminate and a second semiconductor laminate overlapping with the first semiconductor laminate is formed;
- a light emitting unit that has at least one light emitting element constituted by the first semiconductor laminate;
- a driving unit that includes at least one thyristor constituted by the second semiconductor laminate and drives the light emitting element;
- and
- a measurement unit that performs measurement on a target object on the basis of light emitted from the light emitting unit and reflected by the target object,
- wherein the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element,
- wherein, in a reflectance spectrum obtained by irradiating the laminated structure and detecting reflected light, the two resonant wavelengths due to the effect of the thyristor are observed, after formation of the second semiconductor laminate, as two depressions in the reflectance spectrum, wherein one of the two resonant wavelengths is shorter than the resonant wavelength of the light emitting element and the other is longer than the resonant wavelength of the light emitting element.
4 more elements
Dependencies are inferred from the claim text.