Die bonding structure and method of manufacturing the same

Abstract

The present disclosure pertains to a die bonding structure. The die bonding structure includes a carrier substrate, a sintered layer, a nano-twinned layer, an adhesive layer and a chip. The sintered layer is located on the carrier substrate. The nano-twinned layer is located on the sintered layer, in which the surface of the nano-twinned layer has [111] crystal orientation with a density greater than 80%, in which the nano-twinned layer comprises parallel-arranged twin boundaries, the parallel-arranged twin boundaries comprise more than 40% [111] crystal orientation, and the spacing between the parallel-arranged twin boundaries is 10 to 100 nm. The adhesive layer is located on the nano-twinned layer. The chip is located on the adhesive layer.

Dependencies are inferred from the claim text.