Semiconductor device

A semiconductor device, comprising:

• a first semiconductor structure comprising a first confinement layer and a first cladding layer adjacent to the first confinement layer;
• a second semiconductor structure located on the first semiconductor structure;
• and
• a light-emitting structure located between the first semiconductor structure and the second semiconductor structure, and comprising a first multiple quantum well structure comprising a plurality of semiconductor stacks, wherein each of the semiconductor stacks comprises a well layer and a barrier layer;
• wherein the first confinement layer and the second semiconductor structure are adjacent to the light emitting structure, the well layer and the barrier layer in each of the semiconductor stacks comprise the same quaternary semiconductor material comprising InGaAsP, AlGaInAs or InGaNAs, the well layer comprises a first In content percentage, and the barrier layer comprises a second In content percentage less than the first In content percentage;
• and
• wherein the light-emitting structure emits an incoherent light having with a peak wavelength in a range of 700 nm to 3000 nm, the first confinement layer or the second semiconductor structure comprises a different material than the light emitting structure, and the first cladding layer comprises a ternary semiconductor material.