Substrate with low-reflection surface film and structure, and semiconductor device
AssigneeNational Chung Cheng University
InventorsGuo-En Chang, Po-Ruei Huang
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Abstract
A substrate with a low-reflection surface film and structure is provided. A germanium-tin (GeSn) layer or a silicon-germanium-tin (SiGeSn) layer is arranged on an upper surface of a semiconductor substrate as a low-reflection film. A thickness of the low-reflection film is in a range of 10 nm to 10 μm, and an upper surface of the low-reflection film is a rough surface. An electronic element formed on the substrate with a low-reflection surface film and structure has a higher absorption for a light source of the same intensity, the response of a photodetector can be improved, and the photoluminescence (PL) intensity can be enhanced.
Claims3
A semiconductor device, comprising:
- a substrate with a low-reflection surface film and structure, comprising:
- a semiconductor substrate;
- and
- a germanium-tin (GeSn) layer, arranged on an upper surface of the semiconductor substrate as a low-reflection film, wherein a thickness of the germanium-tin (GeSn) layer is in a range of 10 nm to 10 μm, and an upper surface of the germanium-tin (GeSn) layer is a rough surface;
- and
- at least one semiconductor element, formed on the semiconductor substrate and the low-reflection film through a semiconductor process;
- wherein the semiconductor element is a semiconductor light-emitting element.
Dependencies are inferred from the claim text.