Back contact solar cell and photovoltaic module

A photovoltaic module, comprising one or more back contact solar cells, each comprising:

• a silicon substrate, comprising a first side and a second side opposite to the first side;
• a P-type doped polysilicon layer, located in a first region on the first side of the silicon substrate;
• and
• an N-type doped polysilicon layer, located in a second region on the first side of the silicon substrate, wherein the first region is different from the second region,
• wherein a thickness of the P-type doped polysilicon layer is greater than a thickness of the N-type doped polysilicon layer, and wherein a ratio of the thickness of the P-type doped polysilicon layer to the thickness of the N-type doped polysilicon layer is smaller than or equal to 2, wherein a surface of the P-type doped polysilicon layer proximate to the silicon substrate is farther away from the second side of the silicon substrate than a surface of the N-type doped polysilicon layer facing away from the silicon substrate is, wherein a height difference between the surface of the P-type doped polysilicon layer proximate to the silicon substrate and the surface of the N-type doped polysilicon layer facing away from the silicon substrate is greater than 0 and less than or equal to 4.85 micrometers, wherein the P-type doped polysilicon layer comprises a plurality of P-type collector regions, and the N-type doped polysilicon layer comprises a plurality of N-type collector regions, wherein the plurality of N-type collector regions and the plurality of P-type collector regions are alternately distributed along a first direction and extend along a second direction, and wherein along the first direction, a first gap exists between a P-type collector region and a N-type collector region adjacent to the P-type collector region.